Thin film transistor array panel and method for manufacturing the same, and liquid crystal display

ABSTRACT

A thin film transistor array panel includes a substrate, a first thin film transistor formed on the substrate, a color filter formed on the first thin film transistor and having a through hole, a capping layer formed on the color filter and having an opening, and a pixel electrode formed on the capping layer and connected to the first thin film transistor through the through hole. The opening exposes the color filter outside the through hole.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to Korean Patent Application No.10-2008-0043212, filed in the Korean Intellectual Property Office on May9, 2008, the disclosure of which is incorporated by reference herein.

BACKGROUND OF THE INVENTION

(a) Technical Field

The present disclosure relates to a thin film transistor array panel, amethod for manufacturing the same, and a liquid crystal display.

(b) Discussion of Related Art

Flat panel displays are thin as compared to conventional cathode raytube (CRT) displays. Examples of flat panel displays include a liquidcrystal display (LCD), a plasma display panel (PDP), and an organiclight emitting device (OLED).

The LCD is a display device using electro-optical characteristics ofliquid crystals in which light transmission amounts are varied accordingto the intensity of an applied electric field to thereby realize thedisplay of images. The PDP is a display device for displaying images byusing plasma generated by gas discharge. In the OLED, electrons andholes are injected into an organic illumination layer respectively froma cathode (e.g., the electron injection electrode) and an anode (e.g.,the hole injection electrode). The injected electrons and holes arecombined to generate excitons, which illuminate when transitioning froman excited state to a ground state.

In an active matrix type flat panel display, each pixel may beindependently controlled by including switching elements such as thinfilm transistors. The thin film transistors and a color filter may beformed on a same substrate, which is referred to as “color filter onarray” (COA). A capping layer may be formed on the color filter in theCOA structure. The capping layer prevents the color filter from liftingby blocking the generation of outgassing from the color filter, therebyreducing image deterioration due to artifacts such as residual imageswhen the display is driven. The color filter may be made of an organicmaterial with some elasticity. The capping layer may be made of aninorganic material with a smaller elasticity and compressibility ascompared with the color filter of the organic layer.

However, when the solid capping layer is formed on the soft colorfilter, stress is generated on the capping layer. Further, the cappinglayer and the color filter have different compressibility andelasticity, such that a lifting is generated in the interface surfacethereof. For example, when contacting a spacer on the capping layer in aliquid crystal display, the compressibility of the contact portion isdecreased. Therefore, the margins of the liquid crystal are reduced, andas a result, active unfilled area (AUA) deterioration is generated dueto insufficient liquid crystal in some portions of the display area. Anexample of AUA deterioration generated according to the stress of thecapping layer is shown in the graph of FIG. 7.

SUMMARY OF THE INVENTION

A thin film transistor array panel according to an exemplary embodimentof the present invention includes a substrate, a first thin filmtransistor formed on the substrate, a color filter formed on the firstthin film transistor and having a through hole, a capping layer formedon the color filter and having an opening, and a pixel electrode formedon the capping layer and connected to the first thin film transistorthrough the through hole. The opening exposes the color filter outsidethe through hole.

The capping layer and the pixel electrode may cover the entire colorfilter. A portion of the pixel electrode may overlap the capping layernear the opening. The pixel electrode may include a cutout overlappingthe capping layer. The width of the capping layer overlapping the cutoutmay be substantially equal to or larger than the width of the cutout.The pixel electrode may include a first subpixel electrode connected tothe first thin film transistor, and a second subpixel electrodeseparated from the first subpixel electrode. The thin film transistorarray panel may further include a plurality of second thin filmtransistors connected to the second subpixel electrode. The area of thefirst subpixel electrode may be less than the area of the secondsubpixel electrode.

A thin film transistor array panel according to another exemplaryembodiment of the present invention includes a substrate, a gate lineformed on the substrate, a gate insulating layer formed on the gateline, a semiconductor formed on the gate insulating layer, a data lineformed on the semiconductor and having a source electrode, a drainelectrode formed on the semiconductor separated from the sourceelectrode and having an end portion, a color filter formed on the dataline and the drain electrode and having a through hole, a pixelelectrode formed on the color filter and connected to the drainelectrode through the through hole, and a capping layer formed betweenthe pixel electrode and the color filter and having an opening passingthrough the through hole (e.g., located at a position corresponding tothe through hole). The opening has a larger area than the through hole.

The area of the opening may be equal to or smaller than the area of theend portion of the drain electrode. The thin film transistor array panelmay further include a storage electrode line formed on the substrate anddisposed on a same layer as the gate line.

A thin film transistor array panel according to another exemplaryembodiment of the present invention includes a substrate, a gate lineformed on the substrate, a gate insulating layer formed on the gateline, a semiconductor formed on the gate insulating layer, a data lineformed on the semiconductor and including a source electrode, a drainelectrode formed on the semiconductor separated from the sourceelectrode and having an end portion, a color filter formed on the dataline and the drain electrode and having a through hole, a capping layerformed on the color filter and having a first opening, and a pixelelectrode formed on the capping layer and connected to the drainelectrode. The first opening overlaps an edge portion of the pixelelectrode and extends in a direction parallel to the data line.

The first opening may overlap the data line. The thin film transistorarray panel may further include a second opening passing through thethrough hole (e.g., located at a position corresponding to the throughhole) and having a larger area than the area of the through hole. Thearea of the second opening may be equal to or less than the area of theend portion of the drain electrode.

A liquid crystal display according to an exemplary embodiment of thepresent invention includes a plurality of thin film transistors, a colorfilter formed on the thin film transistors, a capping layer formed onthe color filter and having a plurality of openings, a plurality ofpixel electrodes formed on the capping layer and including a pluralityof cutouts, a common electrode facing the pixel electrodes, and a liquidcrystal layer formed between the pixel electrodes and the commonelectrode. The opening and the cutout are alternatively disposed in onedirection. The capping layer and the pixel electrode may cover theentire color filter.

A method of manufacturing a thin film transistor array panel accordingto an exemplary embodiment of the present invention includes forming aplurality of thin film transistors on a substrate, forming a colorfilter having a through hole on the thin film transistor, forming acapping layer on the color filter, forming a first opening passingthrough the through hole (e.g., located at a position corresponding tothe through hole) and larger than the area of the through hole in thecapping layer, and forming a pixel electrode connected to the thin filmtransistor through the through hole and the opening on the cappinglayer.

The forming of the first opening may include forming a second openingoverlapping an edge of the pixel electrode in the capping layer throughthe through hole. The second opening may be formed to be larger than thearea of the through hole in the capping layer

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a layout view of a liquid crystal display including a thinfilm transistor array panel according to an exemplary embodiment of thepresent invention.

FIG. 2 is a layout view of the thin film transistor array panel shown inFIG. 1.

FIG. 3 is a layout view of the common electrode panel shown in FIG. 1.

FIG. 4 is a cross-sectional view of the liquid crystal display shown inFIG. 1 taken along the line IV-IV.

FIG. 5 is a layout view of a liquid crystal display including a thinfilm transistor array panel according to another exemplary embodiment ofthe present invention.

FIG. 6 is a cross-sectional view of the liquid crystal display shown inFIG. 5 taken along the line VI-VI.

FIG. 7 is a graph showing an example of AUA deterioration according thestress of the capping layer.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, exemplary embodiments of the present invention will bedescribed more fully hereinafter with reference to the accompanyingdrawings

In the drawings, the thickness of layers, films, panels, regions, etc.,may be exaggerated for clarity. Like reference numerals designate likeelements throughout the specification. It will be understood that whenan element such as a layer, film, region, or substrate is referred to asbeing “on” another element, it can be directly on the other element orintervening elements may also be present. A thin film transistor arraypanel according to an exemplary embodiment of the present invention willbe described with reference to FIG. 1 to FIG. 4. While a liquid crystaldisplay is described in FIG. 1 to FIG. 4, the thin film transistor arraypanel may be applied to other types of display devices.

FIG. 1 is a layout view of a liquid crystal display including a thinfilm transistor array panel according to an exemplary embodiment of thepresent invention, FIG. 2 is a layout view of the thin film transistorarray panel shown in FIG. 1, FIG. 3 is a layout view of a commonelectrode panel shown in FIG. 1, and FIG. 4 is a cross-sectional view ofthe liquid crystal display shown in FIG. 1 taken along line IV-IV.

Referring to FIG. 1 to FIG. 4, a display device includes a thin filmtransistor array panel 100 and a common electrode panel 200 facing eachother, and a liquid crystal layer 3 formed between the two displaypanels 100 and 200.

The liquid crystal layer 3 may have negative dielectric anisotropy. Theliquid crystal molecules of the liquid crystal layer 3 may be arrangedsuch that a longitudinal axis of the liquid crystal molecules isperpendicular to the surfaces of the two panels when an electric fieldis not present.

Alignment layers (not shown) may be applied to inner surfaces of thedisplay panels 100 and 200, and may be homeotropic alignment layers. Atleast one polarizer (not shown) may be attached on outside surfaces ofthe display panels 100 and 200.

A light blocking member 220 is formed on an insulating substrate 210.The insulating substrate 210 may be made of a transparent material suchas glass or plastic. The light blocking member 220 has an opening 225facing a pixel electrode 191, and blocks light leakage between the pixelelectrodes 191. An insulating layer 250 providing a flat surface isformed on the light blocking member 220. The insulating layer 250 may beomitted.

A common electrode 270 is formed on the insulating layer 250. The commonelectrode 270 is made of a transparent conductor such as Indium TinOxide (ITO) or Indium Zinc Oxide (IZO), and receives a common voltage.The common electrode 270 includes a plurality of cutouts 71. Each of thecutouts 71 has at least one slanted portion extending in a substantiallyoblique direction, and each slanting portion has a plurality of notchesthat may be concave or convex.

A plurality of gate lines 121 and a plurality of storage electrode lines131 are formed on an insulating substrate 110. The insulating substratemay be made of a transparent material such as glass or plastic.

The gate lines 121 extend substantially in a transverse direction andtransmit gate signals. Each gate line 121 includes a plurality of firstand second gate electrodes 124 a and 124 b protruding upward anddownward.

The storage electrode lines 131 extend substantially in a transversedirection and parallel to the gate lines 121, and are supplied with apredetermined voltage. Each storage electrode line 131 is disposedbetween two neighboring gate lines 121. Each storage electrode line 131may be spaced an equal distance from each of the two neighboring gatelines 121. The storage electrode lines 131 include the first and secondstorage electrodes 137 a and 137 b, a branch electrode 136, and aconnection 135. The first and second storage electrodes 137 a and 137 bare approximately rectangular and are connected to each other. Thehorizontal length of the first storage electrode 137 a may be longerthan that of the second storage electrode 137 b. The vertical length ofthe first storage electrode 137 a may be shorter than that of the secondstorage electrode 137 b. The branch electrode 136 is connected to theend of the second storage electrode 137 b and extends in thelongitudinal direction near the gate line 121. The transverse length ofthe branch electrode 136 may be short. The connection 135 connects thebranch electrode 136 to the neighboring first storage electrode 137 a.The vertical length of the connection 135 may be shorter than thevertical lengths of the first and second storage electrodes 137 a and137 b. The shapes and arrangements of the storage electrode lines 131can be modified in various forms.

A gate insulating layer 140 is formed on the gate lines and storageelectrode lines. The gate insulating layer 140 may include siliconnitride (SiNx) or silicon oxide (SiOx).

A plurality of first and second semiconductor islands 154 a and 154 bare formed on the gate insulating layer 140. The first and secondsemiconductor islands 154 a and 154 b may be formed of hydrogenatedamorphous silicon (a-Si) or polysilicon. The first semiconductor island154 a overlaps the first gate electrodes 124 a and the secondsemiconductor island 154 b overlaps the second gate electrodes 124 b.

A pair of first ohmic contact islands 163 a and 165 a (not shown) areformed on the first semiconductor island 154 a, and a pair of secondohmic contact islands 163 b and 165 b are formed on the secondsemiconductor island 154 b. Although not shown, the ohmic contactislands 163 a and 165 a have the same or substantially the samestructure as that of the ohmic contact islands 163 b and 165 b. Theohmic contacts 163 a, 165 a, 163 b, and 165 b may be formed of amaterial such as n+ hydrogenated amorphous silicon, in which an n-typeimpurity is doped with a high concentration, or of silicide.

A plurality of first and second data lines 171 a and 171 b and aplurality of first and second drain electrodes 175 a and 175 b areformed on the ohmic contacts 163 a and 165 a and 163 b and 165 b, and onthe gate insulating layer 140.

The first and second data lines 171 a and 171 b transmit data signals,extend substantially in the vertical direction, and cross the gate lines121 and the connection 135 of the storage electrode lines 131. The firstdata line 171 a includes a first source electrode 173 a that extendstoward the first gate electrode 124 a and may be curved with a “U”shape. The second data line 171 b includes a second source electrode 173b that extends toward the second gate electrode 124 b and may be curvedwith a “U” shape.

The drain electrodes 175 a and 175 b are separated from the data lines171 a and 171 b. Each of the drain electrodes 175 a and 175 b includeone end enclosed by a corresponding one of the source electrodes 173 aand 173 b and another end having a wide area. Referring to FIG. 1 andFIG. 2, a left pixel is disposed between a first pair of data lines 171a and 171 b and a second pair of data lines 171 a and 171 b, and a rightpixel is disposed between a third pair of data lines 171 a and 171 b anda fourth pair of data lines 171 a and 171 b. The contents of the leftand right pixels are similar. However, the wide end portion 177 a of thefirst drain electrode 175 a disposed in the left pixel is disposedcloser to the storage electrode line 131 than the second drain electrode175 b, and the wide end portion 177 b of the second drain electrode 175b disposed in the right pixel is disposed closer to the storageelectrode line 131 than the first drain electrode 175 a. The plane shapeof the drain electrodes may vary in each pixel. However, the plane shapeof the drain electrodes 175 a and 175 b may be the same in all pixels.

The first/second gate electrodes 124 a/124 b, the first/second sourceelectrodes 173 a/173 b and the first/second drain electrodes 175 a/175 bform the first/second thin film transistors (TFT) along with thefirst/second semiconductors 154 a/154 b. The channels of thefirst/second thin film transistors are formed in the first/secondsemiconductors 154 a/154 b between the first/second source electrodes173 a/173 b and the first/second drain electrodes 175 a/175 b.

The ohmic contact islands 163 a and 165 a and 163 b and 165 b, aredisposed between the semiconductors 154 a and 154 b therebelow, and thedata lines 171 a and 171 b and drain electrodes 175 a and 175 bthereabove, and reduce contact resistance between them. Thesemiconductors 154 a and 154 b have portions that are exposed withoutbeing covered by the data lines 171 a and 171 b and the drain electrodes175 a and 175 b, including a region between the source electrodes 173 aand 173 b and drain electrodes 175 a and 175 b.

A passivation layer 180 is formed on the source electrodes 173 a and 173b, the drain electrodes 175 a and 175 b, and the exposed semiconductors154 a and 154 b. The passivation layer 180 may be made of an inorganicinsulator such as silicon nitride or silicon oxide. However, thepassivation layer 180 may be omitted.

The passivation layer 180 has contact holes 185 a and 185 b respectivelyexposing the wide end portions 177 a and 177 b of the drain electrodes175 a and 175 b.

A color filter 230 is formed on the passivation layer 180. The colorfilter 230 is arranged between the first data line 171 a and the seconddata line 171 b, and may be elongated in a vertical direction along thedata lines 171 a and 171 b to form a stripe. The boundary of twoneighboring color filters 230 may be disposed between two nearest datalines 171 a and 171 b such that the two color filters 230 overlap eachother to serve as a light blocking member blocking light leakagegenerated between the pixel electrodes 191. The color filters 230 mayrepresent one of three primary colors such as red, green, and blue, andmay be made of a photosensitive organic material including pigments.

The color filters 230 have through holes 235 a and 235 b through whichthe contact holes 185 a and 185 b pass. The through holes 235 a and 235b are larger than the contact holes 185 a and 185 b.

A capping layer 240 may be made of an inorganic insulator such assilicon nitride or silicon oxide, and is formed on the color filter 230.The capping layer 240 includes a straight portion overlapping the gateline 121 and the data lines 171 a and 171 b, and an oblique portionformed in about a 45 degree angle with respect to the gate line 121. Aportion of the capping layer 240 is removed between neighboring obliqueportions to form an opening 245 exposing the color filter 230.

A pixel electrode 191 is formed on the capping layer 240. The pixelelectrode 191 may be made of a transparent conductive material such asITO or IZO, or a reflective metal such as aluminum, silver, chromium, oralloys thereof.

The pixel electrode 191 includes a first sub-pixel electrode 191 a and asecond sub-pixel electrode 191 b larger than the first sub-pixelelectrode 191 a.

The first sub-pixel electrode 191 a may have a band shape approximatelyresembling a less-than sign (<). The first sub-pixel electrode 191 a isenclosed by the second sub-pixel electrode 191 b via a gap 93 interposedtherebetween. The second sub-pixel electrode 191 b has a plurality ofcutouts 91 with a straight band shape and the cutouts 91 may be disposedat an angle of about 45 degrees with respect to the gate lines 121 andthe data lines 171 a and 171 b. The gap 93 includes a plurality ofoblique portions substantially parallel to the cutouts 91, and aplurality of longitudinal portions substantially parallel to the datalines 171 a and 171 b.

The cutouts 91 and the gap 93 of the second pixel electrode 191 boverlap the oblique portion of the capping layer 240, and may bealternately arranged with the cutouts 71 of the common electrode 270.The capping layer 240 covers a part of the color filter 230 that is notcovered by the first and second pixel electrodes 191 a and 191 b.

The first and second subpixel electrodes 191 a and 191 b have almost thesame shape as the opening 245, and the majority thereof is disposed inthe opening 245. The width W₁ of the oblique portion of the cappinglayer 240 is wider than the width W₂ of the cutout 91 such that theedges of the first and second subpixel electrodes 191 a and 191 boverlap the edge of the capping layer 240. However, the first and secondsubpixel electrodes 191 a and 191 b need not overlap the capping layer240, and the width W₁ of the oblique portion of the capping layer 240may be substantially the same as the width W₂ of the cutout 91.

When the opening 245 is formed, the stress generated by the cappinglayer 240 may be reduced, and furthermore lifting in the interfacebetween the capping layer 240 and the color filter 230 may be preventedsuch that the AUA deterioration may be prevented. For example, when theamount of liquid crystal molecules of the liquid crystal layer 3 isinsufficiently filled by about 6% with respect to a standard fillpercentage value, the AUA deterioration may not be presented.

The capping layer 240 and the pixel electrode 191 cover the whole colorfilter 230 such that they may prevent the color filter 230 from beinglifted and suppress contamination of the liquid crystal layer 3 by anorganic material such as a solvent inflowed from the color filter 230,and thereby artifacts such as afterimages that may be generated duringdriving of the display may be prevented.

The first/second subpixel electrodes 191 a/191 b are connected to thefirst/second drain electrodes 175 a/175 b of the first/second thin filmtransistors through the opening 245 and the contact holes 185 a/185 b.In FIG. 2, the first subpixel electrode 191 a disposed in the left pixelis connected to the first drain electrode 175 a disposed in the leftside, and the first subpixel electrode 191 a disposed in the neighboringpixel of the right side is connected to the second drain electrode 175 bdisposed in the right side.

The first/second subpixel electrodes 191 a/191 b receive data voltagesfrom the first/second drain electrodes 175 a/175 b. The first/secondsubpixel electrodes 191 a/191 b applied with the data voltages generatean electric field along with the common electrode 270 of the commonelectrode panel 200 such that the orientation of the liquid crystalmolecules of the liquid crystal layer 3 between the electrodes 191 a/191b and 270 is determined. Accordingly, the luminance of the lighttransmitted through the liquid crystal layer 3 differs depending on thethusly determined orientation of the liquid crystal molecules.

The first thin film transistor and the first subpixel electrode 191 a,and the liquid crystal layer 3, the common electrode 270, and thepolarizer that are disposed on them, form a unit for displaying oneluminance point that is referred to as the first subpixel hereafter. Thesecond thin film transistor and the second subpixel electrode 191 b, andthe liquid crystal layer 3, the common electrode 270, and the polarizerthat are disposed on them, form a unit for displaying one luminancepoint that is referred to as the second subpixel hereafter. The firstsubpixel and the second subpixel are combined to represent one effectiveluminance point, which can be used to represent one pixel.

The first/second subpixel electrodes 191 a/191 b and the commonelectrode 270 form the first/second capacitors (called liquid crystalcapacitors) to maintain the applied voltage even after the TFT is turnedoff. The first/second subpixel electrodes 191 a/191 b and the storageelectrode line 131 form a storage capacitor.

FIG. 5 is a layout view of a liquid crystal display including a thinfilm transistor array panel according to another exemplary embodiment ofthe present invention, and FIG. 6 is a cross-sectional view of theliquid crystal display shown in FIG. 5 taken along the line VI-VI.

Referring to FIG. 5 and FIG. 6, a liquid crystal display includes a thinfilm transistor array panel 100 including the first and second thin filmtransistors, a color filter 230, a capping layer 240 and a pixelelectrode 191, a common electrode panel 200 including a light blockingmember 220 and a common electrode 270, and a liquid crystal layer 3formed between the display panels 100 and 200.

The structures of the thin film transistor array panel 100, the commonelectrode panel 200, and the liquid crystal layer 3 are similar to thestructures of the exemplary embodiment shown in FIG. 1 to FIG. 4.

However, the capping layer 240 according to the present exemplaryembodiment has an opening 245 formed near the through holes 235 a and235 b of the color filter 230 and under the edges of the first andsecond pixel electrodes 191 a and 191 b, differently from the cappinglayer 240 shown in FIG. 1, FIG. 2, and FIG. 4.

In the planar view, the opening 245 near the through holes 235 a and 235b may have an approximately square shape. The area of the opening 245 islarger than the area of the through holes 235 a and 235 b, and may beequal to or less than the area of the wide end portions 177 a and 177 bof the drain electrodes 175 a and 175 b. The opening 245 disposed underthe edges of the first and second pixel electrodes 191 a and 191 b mayhave nearly a rectangular shape in the direction of the data lines 171 aand 171 b and overlaps the data lines 171 a and 171 b.

The capping layer 240 according to the present exemplary embodiment mayhave only one opening 245 either near the through holes 235 a and 235 bor disposed under the edge of the first and second pixel electrodes 191a and 191 b.

Many characteristics of the exemplary embodiment shown in FIG. 1 to FIG.4 may apply to the exemplary embodiment shown in FIG. 5 and FIG. 6.

When the opening 245 is formed, the stress generated by the cappinglayer 240 may be reduced, and furthermore the lifting in the interfacebetween the capping layer 240 and the color filter 230 may be preventedsuch that the AUA deterioration may be prevented. The capping layer 240and the pixel electrode 191 cover the whole color filter 230 such thatthey may prevent the color filter 230 from being lifted and suppresscontamination of the liquid crystal layer 3 by an organic material suchas a solvent inflowed from the color filter 230, and thereby artifactssuch as afterimages that may be generated during driving may beprevented.

A method of manufacturing a liquid crystal display including a thin filmtransistor array panel according to an exemplary embodiment of thepresent invention will be described with reference to FIG. 5 and FIG. 6.

The first and second thin film transistors including the first andsecond gate electrodes 124 a and 124 b, the first and second sourceelectrodes 173 a and 173 b, the first and second drain electrodes 175 aand 175 b, and the first and second semiconductors 154 a and 154 b areformed on a substrate 110.

Next, a passivation layer 180 and a color filter 230 are deposited onthe first and second thin film transistors. Next, through holes 235 aand 235 b are formed in the color filter 230.

Next, an inorganic material is deposited on the color filter 230 to forma capping layer 240. Next, the capping layer 240 is etched to form anopening 245 larger than the through holes 235 a and 235 b near thethrough holes 235 a and 235 b. When etching the capping layer 240, thepassivation layer 180 exposed through the through holes 235 a and 235 bmay be etched to form contact holes 185 a and 185 b.

Next, a pixel electrode 191 connected to the first and second drainelectrodes 175 a and 175 b through the opening 245, the through holes235 a and 235 b, and the contact holes 185 a and 185 b is formed on thecapping layer 240.

Next, a common electrode panel 200 including a light blocking member 220and a common electrode 270 is combined with the thin film transistorarray panel 100, and liquid crystal molecules are injected between thetwo display panels 100 and 200 to form a liquid crystal layer 3. Theliquid crystal layer 3 may be formed before the combination of the twodisplay panels 100 and 200 or after the combination.

The manufacturing method of the liquid crystal display according to theexemplary embodiment shown in FIG. 1 to FIG. 4 is similar to the abovedescribed method. However, as shown in FIG. 6, the resulting shape ofthe opening 245 of the capping layer 240 formed in the method describedwith respect to FIGS. 5-6 differs with respect to the capping layer 240formed by the method described with respect to FIGS. 1-4.

Having described exemplary embodiments of the present invention, it isto be understood that the invention is not limited to the disclosedembodiments, but, on the contrary, is intended to cover variousmodifications and equivalent arrangements included within the spirit andscope of the disclosure.

1. A thin film transistor array panel comprising: a substrate; a firstthin film transistor formed on the substrate; a color filter formed onthe first thin film transistor and having a through hole; a cappinglayer formed on the color filter, and having an opening; and a pixelelectrode formed on the capping layer and connected to the first thinfilm transistor through the through hole, wherein parts of the pixelelectrode are located within the opening and are in direct contact withportions of the color filter outside the through hole.
 2. The thin filmtransistor array panel of claim 1, wherein the entire color filter iscovered by a combination of the capping layer and the pixel electrode.3. The thin film transistor array panel of claim 2, wherein a portion ofthe pixel electrode overlaps the capping layer near the opening.
 4. Thethin film transistor array panel of claim 1, wherein the pixel electrodeincludes a cutout overlapping the capping layer.
 5. The thin filmtransistor array panel of claim 4, wherein the width of the cappinglayer overlapping the cutout is substantially equal to or larger thanthe width of the cutout.
 6. The thin film transistor array panel ofclaim 1, wherein the pixel electrode comprises: a first subpixelelectrode connected to the first thin film transistor; and a secondsubpixel electrode separated from the first subpixel electrode.
 7. Thethin film transistor array panel of claim 6, further comprising: aplurality of second thin film transistors connected to the secondsubpixel electrode.
 8. The thin film transistor array panel of claim 7,wherein the area of the first subpixel electrode is less than the areaof the second subpixel electrode.
 9. A method for manufacturing a thinfilm transistor array panel comprising: forming a plurality of thin filmtransistors on a substrate; forming a color filter having a through holeon the thin film transistor; forming a capping layer on the colorfilter; forming a first opening at a position corresponding to thethrough hole and larger than the area of the through hole in the cappinglayer; and forming a pixel electrode connected to the thin filmtransistor through the through hole and the opening on the cappinglayer, wherein the parts of the pixel electrode are located within thefirst opening and are in direct contact with portions of the colorfilter outside the through hole.
 10. A method for manufacturing a thinfilm transistor array panel comprising: forming a plurality of thin filmtransistors on a substrate; forming a color filter having a through holeon the thin film transistor; forming a capping layer on the colorfilter; forming a first opening at a position corresponding to thethrough hole and larger than the area of the through hole in the cappinglayer; and forming a pixel electrode connected to the thin filmtransistor through the through hole and the opening on the cappinglayer, wherein the first opening contacts portions of the color filteroutside the through hole, wherein the forming of the first openingcomprises: forming a second opening disposed on a portion correspondingto an edge of the pixel electrode in the capping layer.